APTM120SK15G

MOSFET N-CH 1200V 60A SP6

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Specifications
Part Number:APTM120SK15G
Manufacturer:Microsemi Corporation
Description:MOSFET N-CH 1200V 60A SP6
Nkesp Part Number:73D-APTM120SK15G
Part Status3171 pcs
Manufacturer:Microsemi Corporation
Vgs(th) (Max) @ Id:5V @ 10mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP6
Series:-
Rds On (Max) @ Id, Vgs:175mOhm @ 30A, 10V
Power Dissipation (Max):1250W (Tc)
Package / Case:SP6
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:20600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:748 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
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In stock: 3171 pcs

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Data sheet

Product Comparison

Part Number APTM120SK15G
APTM120SK15G
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APTM120SK29TG
ManufacturerMicrosemi CorporationMicrosemi CorporationMicrochip TechnologyMicrosemi Corporation
PackageBulkBulkBulkBulk
Vgs (Max)±30V±30V±30V±30V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Drain to Source Voltage (Vdss)1200 V1200 V1200 V1200 V
FET Feature----
Vgs(th) (Max) @ Id5V @ 10mA5V @ 2.5mA5V @ 20mA5V @ 5mA
Series----
Supplier Device PackageSP6SP1SP6SP4
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)1250W (Tc)390W (Tc)3290W (Tc)780W (Tc)
Input Capacitance (Ciss) (Max) @ Vds20600 pF @ 25 V7736 pF @ 25 V28900 pF @ 25 V10300 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)18A (Tc)116A (Tc)34A (Tc)
Gate Charge (Qg) (Max) @ Vgs748 nC @ 10 V300 nC @ 10 V1100 nC @ 10 V374 nC @ 10 V
Rds On (Max) @ Id, Vgs175mOhm @ 30A, 10V672mOhm @ 14A, 10V120mOhm @ 58A, 10V348mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Package / CaseSP6SP1SP6SP4

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