APTM120A65FT1G

MOSFET 2N-CH 1200V 16A SP1

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Specifications
Part Number:APTM120A65FT1G
Manufacturer:Microsemi
Description:MOSFET 2N-CH 1200V 16A SP1
Nkesp Part Number:73D-APTM120A65FT1G
Part Status4776 pcs
Manufacturer:Microsemi
Vgs(th) (Max) @ Id:5V @ 2.5mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP1
Series:-
Rds On (Max) @ Id, Vgs:780mOhm @ 14A, 10V
Power - Max:390W
Package / Case:SP1
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:7736pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:16A
Configuration:2 N-Channel (Half Bridge)
Base Product Number:APTM120
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In stock: 4776 pcs

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Data sheet

Product Comparison

Part Number APTM120A65FT1G
APTM120A65FT1G
APTM10TDUM09PG
APTM10TDUM09PG
APTM120A20DG
APTM120A20DG
APTM120A15FG
APTM120A15FG
ManufacturerMicrosemi CorporationMicrosemi CorporationMicrochip TechnologyMicrochip Technology
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackageSP1SP6-PSP6SP6
PackageBulkBulkBulkBulk
Vgs(th) (Max) @ Id5V @ 2.5mA4V @ 2.5mA5V @ 6mA5V @ 10mA
Base Product NumberAPTM120APTM10APTM120APTM120
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V350nC @ 10V600nC @ 10V748nC @ 10V
Current - Continuous Drain (Id) @ 25°C16A139A50A60A
Rds On (Max) @ Id, Vgs780mOhm @ 14A, 10V10mOhm @ 69.5A, 10V240mOhm @ 25A, 10V175mOhm @ 30A, 10V
Package / CaseSP1SP6SP6SP6
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Configuration2 N-Channel (Half Bridge)6 N-Channel (3-Phase Bridge)2 N-Channel (Half Bridge)2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)1200V (1.2kV)100V1200V (1.2kV)1200V (1.2kV)
Series----
Input Capacitance (Ciss) (Max) @ Vds7736pF @ 25V9875pF @ 25V15200pF @ 25V20600pF @ 25V
FET Feature----
Power - Max390W390W1250W1250W
Mounting TypeChassis MountChassis MountChassis MountChassis Mount

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