APTC90H12SCTG

MOSFET 4N-CH 900V 30A SP4

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Specifications
Part Number:APTC90H12SCTG
Manufacturer:Microsemi
Description:MOSFET 4N-CH 900V 30A SP4
Nkesp Part Number:73D-APTC90H12SCTG
Part Status4753 pcs
Manufacturer:Microsemi
Vgs(th) (Max) @ Id:3.5V @ 3mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP4
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V
Power - Max:250W
Package / Case:SP4
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:270nC @ 10V
FET Feature:Super Junction
Drain to Source Voltage (Vdss):900V
Current - Continuous Drain (Id) @ 25°C:30A
Configuration:4 N-Channel (Half Bridge)
Base Product Number:APTC90
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In stock: 4753 pcs

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Data sheet

Product Comparison

Part Number APTC90H12SCTG
APTC90H12SCTG
APTC80TA15PG
APTC80TA15PG
APTJC120AM25VCT1AG
APTJC120AM25VCT1AG
APTC90H12T2G
APTC90H12T2G
ManufacturerMicrosemi CorporationMicrochip TechnologyMicrosemi CorporationMicrosemi Corporation
Current - Continuous Drain (Id) @ 25°C30A28A-30A
Base Product NumberAPTC90APTC80APTJC120APTC90
FET FeatureSuper Junction--Super Junction
Mounting TypeChassis MountChassis Mount-Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 100V4507pF @ 25V-6800pF @ 100V
Vgs(th) (Max) @ Id3.5V @ 3mA3.9V @ 2mA-3.5V @ 3mA
Rds On (Max) @ Id, Vgs120mOhm @ 26A, 10V150mOhm @ 14A, 10V-120mOhm @ 26A, 10V
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)--40°C ~ 150°C (TJ)
Package / CaseSP4SP6-SP2
Supplier Device PackageSP4SP6-P-SP2
Configuration4 N-Channel (Half Bridge)6 N-Channel (3-Phase Bridge)-4 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)900V800V-900V
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V180nC @ 10V-270nC @ 10V
Power - Max250W277W-250W
SeriesCoolMOS™--CoolMOS™
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)-MOSFET (Metal Oxide)
PackageBulkBulkBulkTray

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