APT43F60L

MOSFET N-CH 600V 45A TO264

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Specifications
Part Number:APT43F60L
Manufacturer:Micrel / Microchip Technology
Description:MOSFET N-CH 600V 45A TO264
RoHs Status:
Nkesp Part Number:73D-APT43F60L
Part Status2168 pcs
Manufacturer:Micrel / Microchip Technology
Vgs(th) (Max) @ Id:5V @ 2.5mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-264 [L]
Series:POWER MOS 8™
Rds On (Max) @ Id, Vgs:150mOhm @ 21A, 10V
Power Dissipation (Max):780W (Tc)
Package / Case:TO-264-3, TO-264AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Base Product Number:APT43F60
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In stock: 2168 pcs

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Data sheet

Product Comparison

Part Number APT43F60L
APT43F60L
APT43M60L
APT43M60L
APT47N60BC3G
APT47N60BC3G
APT42F50B
APT42F50B
ManufacturerMicrochip TechnologyMicrochip TechnologyMicrochip TechnologyMicrochip Technology
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs215 nC @ 10 V215 nC @ 10 V260 nC @ 10 V170 nC @ 10 V
Vgs(th) (Max) @ Id5V @ 2.5mA5V @ 2.5mA3.9V @ 2.7mA5V @ 1mA
Vgs (Max)±30V±30V±20V±30V
FET Feature----
SeriesPOWER MOS 8™POWER MOS 8™-POWER MOS 8™
Package / CaseTO-264-3, TO-264AATO-264-3, TO-264AATO-247-3TO-247-3
Supplier Device PackageTO-264 [L]TO-264 [L]TO-247 [B]TO-247 [B]
Base Product NumberAPT43F60APT43M60APT47N60APT42F50
PackageTubeTubeTubeTube
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Input Capacitance (Ciss) (Max) @ Vds8590 pF @ 25 V8590 pF @ 25 V7015 pF @ 25 V6810 pF @ 25 V
Rds On (Max) @ Id, Vgs150mOhm @ 21A, 10V150mOhm @ 21A, 10V70mOhm @ 30A, 10V130mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)600 V600 V600 V500 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)45A (Tc)47A (Tc)42A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)780W (Tc)780W (Tc)417W (Tc)625W (Tc)

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