AOW7S65

MOSFET N-CH 650V 7A TO262

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Specifications
Part Number:AOW7S65
Manufacturer:Alpha and Omega Semiconductor, Inc.
Description:MOSFET N-CH 650V 7A TO262
RoHs Status:
Nkesp Part Number:73D-AOW7S65
Part Status23348 pcs
Manufacturer:Alpha and Omega Semiconductor, Inc.
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-262
Series:aMOS™
Rds On (Max) @ Id, Vgs:650mOhm @ 3.5A, 10V
Power Dissipation (Max):104W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:434 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Base Product Number:AOW7
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In stock: 23348 pcs

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Data sheet

Product Comparison

Part Number AOW7S65
AOW7S65
AOWF10N60C
AOWF10N60C
AOW482
AOW482
AOW410
AOW410
ManufacturerAlpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
Vgs(th) (Max) @ Id4V @ 250µA4.5V @ 250µA3.7V @ 250µA-
Rds On (Max) @ Id, Vgs650mOhm @ 3.5A, 10V750mOhm @ 5A, 10V7.2mOhm @ 20A, 10V-
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
PackageTubeTape & Reel (TR)TubeTube
FET Feature----
Drain to Source Voltage (Vdss)650 V600 V80 V-
Base Product NumberAOW7AOWF10AOW48AOW41
Input Capacitance (Ciss) (Max) @ Vds434 pF @ 100 V1600 pF @ 25 V4870 pF @ 40 V-
SeriesaMOS™-SDMOS™SDMOS™
Drive Voltage (Max Rds On, Min Rds On)10V10V7V, 10V-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-
Current - Continuous Drain (Id) @ 25°C7A (Tc)10A (Tc)11A (Ta), 105A (Tc)150A (Tc)
Supplier Device PackageTO-262TO-262FTO-262TO-262
FET TypeN-ChannelN-ChannelN-Channel-
Gate Charge (Qg) (Max) @ Vgs9.2 nC @ 10 V40 nC @ 10 V81 nC @ 10 V-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Power Dissipation (Max)104W (Tc)28W (Tc)2.1W (Ta), 333W (Tc)-
Vgs (Max)±30V±30V±25V-

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