AON6850

MOSFET 2N-CH 100V 5A 8DFN

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Specifications
Part Number:AON6850
Manufacturer:Alpha and Omega Semiconductor, Inc.
Description:MOSFET 2N-CH 100V 5A 8DFN
RoHs Status:
Nkesp Part Number:73D-AON6850
Part Status20854 pcs
Manufacturer:Alpha and Omega Semiconductor, Inc.
Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-DFN (5x6)
Series:SDMOS™
Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
Power - Max:1.7W
Package / Case:8-PowerSMD, Flat Leads
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1840pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:5A
Configuration:2 N-Channel (Dual)
Base Product Number:AON685
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In stock: 20854 pcs

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Data sheet

Product Comparison

Part Number AON6850
AON6850
AON6884L_002
AON6884L_002
AON6810
AON6810
AON6906A
AON6906A
ManufacturerAlpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
Vgs(th) (Max) @ Id4V @ 250µA2.7V @ 250µA2.2V @ 250µA2.4V @ 250µA
Supplier Device Package8-DFN (5x6)8-DFN (5x6)8-DFN-EP (5x6)8-DFN (5x6)
Drain to Source Voltage (Vdss)100V40V30V30V
SeriesSDMOS™---
FET Feature--Logic Level GateLogic Level Gate
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C5A34A (Tc)25A9.1A, 10A
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Rds On (Max) @ Id, Vgs35mOhm @ 5A, 10V11.3mOhm @ 10A, 10V4.4mOhm @ 20A, 10V14.4mOhm @ 9.1A, 10V
Package / Case8-PowerSMD, Flat Leads8-PowerSMD, Flat Leads8-SMD, Flat Lead Exposed Pad8-PowerVDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberAON685AON688AON681AON6906
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual) Common Drain2 N-Channel (Half Bridge)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 50V1950pF @ 20V1720pF @ 15V670pF @ 15V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V16nC @ 4.5V34nC @ 10V9nC @ 10V
Power - Max1.7W21W4.1W1.9W, 2W

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