AO4498EL

MOSFET N-CH 30V 18A 8SOIC

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Specifications
Part Number:AO4498EL
Manufacturer:Alpha and Omega Semiconductor, Inc.
Description:MOSFET N-CH 30V 18A 8SOIC
Nkesp Part Number:73D-AO4498EL
Part Status4677 pcs
Manufacturer:Alpha and Omega Semiconductor, Inc.
Vgs(th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:5.8mOhm @ 18A, 10V
Power Dissipation (Max):3.1W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Base Product Number:AO44
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In stock: 4677 pcs

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Product Comparison

Part Number AO4498EL
AO4498EL
AO4578
AO4578
AO4494
AO4494
AO4492
AO4492
ManufacturerAlpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.Alpha & Omega Semiconductor Inc.
Rds On (Max) @ Id, Vgs5.8mOhm @ 18A, 10V5.7mOhm @ 20A, 10V6.5mOhm @ 18A, 10V9.5mOhm @ 14A, 10V
Series----
Vgs (Max)±20V±20V±20V±20V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V25 nC @ 10 V36 nC @ 10 V18 nC @ 10 V
Vgs(th) (Max) @ Id2.3V @ 250µA2.2V @ 250µA2.5V @ 250µA2.2V @ 250µA
Power Dissipation (Max)3.1W (Ta)3.1W (Ta)3.1W (Ta)3.1W (Ta)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)30 V30 V30 V30 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device Package8-SOIC8-SOIC8-SOIC8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Base Product NumberAO44AO45AO44AO44
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 15 V1128 pF @ 15 V1900 pF @ 15 V770 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C18A (Ta)20A (Ta)18A (Tc)14A (Ta)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----

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