2SK3128(Q)

MOSFET N-CH 30V 60A TO3P

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Specifications
Part Number:2SK3128(Q)
Manufacturer:Toshiba Semiconductor and Storage
Description:MOSFET N-CH 30V 60A TO3P
Nkesp Part Number:73D-2SK3128(Q)
Part Status3963 pcs
Manufacturer:Toshiba Semiconductor and Storage
Vgs(th) (Max) @ Id:3V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3P(N)
Series:-
Rds On (Max) @ Id, Vgs:12mOhm @ 30A, 10V
Power Dissipation (Max):150W (Tc)
Package / Case:TO-3P-3, SC-65-3
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Base Product Number:2SK3128
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In stock: 3963 pcs

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Product Comparison

Part Number 2SK3128(Q)
2SK3128(Q)
2SK3116-S-AZ
2SK3116-S-AZ
2SK3116B-ZK-E1-AY
2SK3116B-ZK-E1-AY
2SK3221-AZ
2SK3221-AZ
ManufacturerToshiba Semiconductor and StorageRenesas Electronics America IncRenesas Electronics America IncRenesas Electronics America Inc
Power Dissipation (Max)150W (Tc)---
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V---
FET TypeN-Channel---
TechnologyMOSFET (Metal Oxide)---
PackageTubeBulkBulkBulk
Drive Voltage (Max Rds On, Min Rds On)10V---
Vgs(th) (Max) @ Id3V @ 1mA---
Mounting TypeThrough Hole---
Operating Temperature150°C (TJ)---
Series-***
FET Feature----
Drain to Source Voltage (Vdss)30 V---
Supplier Device PackageTO-3P(N)---
Vgs (Max)±20V---
Package / CaseTO-3P-3, SC-65-3---
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 10 V---
Current - Continuous Drain (Id) @ 25°C60A (Ta)---
Rds On (Max) @ Id, Vgs12mOhm @ 30A, 10V---
Base Product Number2SK3128---

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