In stock: 4110 pcs
| Part Number |
2N6770T1
 |
2N6766
 |
2N6788
|
2N6764
|
|
|---|---|---|---|---|---|
| Manufacturer | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | Microsemi Corporation | |
| Drain to Source Voltage (Vdss) | 500 V | 200 V | 100 V | 100 V | |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) | 4W (Ta), 150W (Tc) | 800mW (Tc) | 4W (Ta), 150W (Tc) | |
| Package / Case | TO-254-3, TO-254AA (Straight Leads) | TO-204AE | TO-205AF Metal Can | TO-204AE | |
| Package | Bulk | Bulk | Bulk | Bulk | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | 30A (Tc) | 6A (Tc) | 38A (Tc) | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Base Product Number | 2N6770 | - | - | - | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V | 90mOhm @ 30A, 10V | 300mOhm @ 3.5A, 10V | 65mOhm @ 38A, 10V | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
| Series | - | - | - | - | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| FET Feature | - | - | - | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 115 nC @ 10 V | 18 nC @ 10 V | 125 nC @ 10 V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| Supplier Device Package | TO-254AA | TO-3 | TO-39 | TO-3 | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
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