2N4351 TO-72 4L

N-CHANNEL ENHANCEMENT MODE MOSFE

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Specifications
Part Number:2N4351 TO-72 4L
Manufacturer:Linear Integrated Systems, Inc.
Description:N-CHANNEL ENHANCEMENT MODE MOSFE
Nkesp Part Number:73D-2N4351 TO-72 4L
Part Status5674 pcs
Manufacturer:Linear Integrated Systems, Inc.
Vgs(th) (Max) @ Id:5V @ 10µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-72-4
Rds On (Max) @ Id, Vgs:300Ohm @ 100µA, 10V
Power Dissipation (Max):350mW (Ta)
Package / Case:TO-206AF, TO-72-4 Metal Can
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:20mA

In stock: 5674 pcs

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Product Comparison

Part Number 2N4351 TO-72 4L
2N4351 TO-72 4L
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DMN6140LQ-7-52
ManufacturerLinear Integrated Systems, Inc.STMicroelectronicsInfineon TechnologiesDiodes Incorporated
Current - Continuous Drain (Id) @ 25°C20mA20A (Tc)40A (Tc)1.6A (Ta)
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds-1300 pF @ 25 V2310 pF @ 25 V315 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)10V10V7V, 10V4.5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs-37 nC @ 10 V41 nC @ 10 V8.6 nC @ 10 V
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseTO-206AF, TO-72-4 Metal CanTO-220-38-PowerVDFNTO-236-3, SC-59, SOT-23-3
Vgs (Max)±30V±30V±20V±20V
Vgs(th) (Max) @ Id5V @ 10µA5V @ 250µA3.4V @ 30µA3V @ 250µA
Drain to Source Voltage (Vdss)25 V600 V40 V60 V
Rds On (Max) @ Id, Vgs300Ohm @ 100µA, 10V290mOhm @ 10A, 10V3.1mOhm @ 20A, 10V140mOhm @ 1.8A, 10V
Supplier Device PackageTO-72-4TO-220PG-TSDSON-8SOT-23-3
Power Dissipation (Max)350mW (Ta)192W (Tc)71W (Tc)700mW (Ta)

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